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  jmnic product specification silicon pnp power transistors 2SA658 description ? with to-3 package ? wide area of safe operation ? complement to type 2sc521 applications ? for audio frequency and power amplifier applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -70 v v ceo collector-emitter voltage open base -70 v v ebo emitter-base voltage open collector -5 v i c collector current -7 a p c collector power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3) and symbol
jmnic product specification 2 silicon pnp power transistors 2SA658 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-25ma ;i b =0 -70 v v (br)cbo collector-base breakdown voltage i c =-1ma ;i e =0 -70 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-5a; i b =-1a -2.0 v v besat base-emitter saturation voltage i c =-5a; i b =-1a -2.5 v i cbo collector cut-off current v cb =-70v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.1 ma h fe dc current gain i c =-1a ; v ce =-5v 30 300 c ob collector output capacitance i e =0; v cb =-10v;f=1mhz 150 pf f t transition frequency i c =-1a ; v ce =-10v 5 mhz
jmnic product specification 3 silicon pnp power transistors 2SA658 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm)


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